磁控溅射法制备Si1-xGexB多层薄膜及其热电性能研究
摘要：摘要本文通过磁控溅射法制备了一种独特的SiGe/B五层结构薄膜材料，每层结构包含60 nm的Si60Ge40层和0.55 nm的B层。实验考察了薄膜材料的热电性能，结果表明：B掺杂的溅射时间最佳为30 s；当退火温度为650℃时，薄膜的致密性最好，且在此温度下具有较高的Seebeck系数，最大值为6.75 × 10−4 V/K，电阻率最小值为1.6 × 10−5 Ω•m，其功率因子最大值为0.026 W/(m?K2)。
Abstract:：Unique structure (SiGe/B) based multilayer film prepared by magnetron sputtering was designed with purposes of improving electrical conductivity and Seebeck coefficient, and reducing thermal conductivity. The multilayer film contains 5 periods and each of them consisted of a 60-nm-thick Si60Ge40 layer and a 0.55-nm-thick B layer. Its thermoelectric performance was investigated and results showed that the best doping time of B was 30 s. When the annealing temperature was 650oC, the optimized film showed greatly enhanced Seebeck coefficient up to 6.75 × 10−4 V/K with decreased electrical resistivity of 1.6×10−5 Ω•m, and the maximum power factor was 0.026 W/m•K2.
中文标题：磁控溅射法制备Si1−xGexB多层薄膜及其热电性能研究
英文标题：Thermoelectric Property of Si1−xGex/B Multilayer Thin Film Prepared by Magnetron Sputtering
发表时间：2016-05-02
作者：
杜 鑫，苗 蕾，刘呈燕，王潇漾
作者简介：
杜 鑫（1991-），男，硕士，主要从事SiGe热电薄膜的研究。
关键词：热电材料,硅锗薄膜,纳米结构,热电性能,
Key words：thermoelectric material,SiGe thin film,nanostructure,thermoelectric performance,
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