文档名：ZnO压敏电阻微观结构参数与宏观电气性能的关联机制
摘要：ZnO压敏电阻是金属氧化物避雷器的核心部件,在抑制电力系统过电压方面发挥了重要的作用.随着特高压输电技术的发展,对ZnO压敏电阻的残压、通流容量等电气特性提出了更高的要求.该文从材料计算的角度出发,以基于Voronoi模型的ZnO压敏电阻优化计算模型为基础,计算研究了晶粒尺寸、尺寸不均匀度、晶粒电阻率等微观结构参数与多种宏观电气性能之间的关联机制,将多变量、多目标的最优化问题,极大地简化为仅包含三类优化变量、两类优化目标的最优化问题,并制定出具有针对性的优化策略和步骤,为ZnO压敏电阻性能的改进提供了重要理论依据,对高性能避雷器的设计制造具有重要意义.
Abstract：ThedevelopmentofUHVtechnologyhasputforwardhigherrequirementsforvariouselectricalcharacteristicsofZnOvaristors.AsthevoltagelevelofUHVtransmissionsystemistoohigh,thevolume,costandoperationreliabilityofequipmentarelargelydependentontheinsulationlevelofthesystem.Whiletheinsulationcoordinationofthesystemisbasedontheovervoltagelevelofthesysteminvariousconditions,whichisdirectlydeterminedbytheprotectioncapabilityofthearresterusedintheUHVtransmissionsystem.Therefore,therearemanyvitaltechnicalproblemstobesolvedinordertodevelopexcellentperformanceofthearresterforhighvoltage,suchasexcellentperformanceZnOvaristors,uniformityofpotentialdistribution,structuraldesign,andsoon.ZnOvaristorsarethecorecomponentsofarresters,parameterssuchasvoltagegradientE1mA,nonlinearcoefficientα1mA,residualvoltageK,leakagecurrentIL,etc.,allplayacriticalroleintheoverallperformanceofarrester.Besides,thepreparationprocessofZnOvaristorsiscomplicatedandinvolvesmanyprocesses,togetherwithperformancetesting,whichleadtoalongpreparationcycleandhighmaterialcost.Atpresent,theimprovementofcomputingpowerprovidesanewmeansforthestudyofcomplexsystems.Thecomposition,structureandperformanceofZnOvaristorscanbesimulatedbycomputertocontrolperformance,whichcansignificantlyimprovetheresearchefficiency.Firstly,westudiedthecorrelationmechanismbetweenmicro-structureandpropertiesofZnOvaristorsthroughVoronoinetworksimulationmodelestablishedbyourresearchgroup,andoptimizedtheparameterstodescribethetrueconductionmechanismofgrainboundarybarrierclearlyandaccurately.Secondly,sincechoiceofthequantityofZnOgrainisthekeyproblemtostudytheelectricalperformanceparametersofvaristorbyusingsimulationmodel.WeanalyzedtheequivalenceeffectofdifferentZnOgrainsizesandandfoundthatthesimulationresultsareclosertotherealeffectasthegrainsizeincreases.Finally,thenumberof50×50grainsizeisusedastheequivalentmodelwithgoodeffectandnotalongcalculationtime.Theeffectsofdifferentgrainsizes,inhomogeneityofsize,grainresistivity,porosityratioandsamplediameteronthemacroscopicelectricalperformanceparametersofZnOvaristorsaresimulatedandcalculated,then,theinfluencesofthesemicroscopicparametersonvariousmacroscopicelectricalperformanceparameters,suchasvoltagegradient,nonlinearcoefficient,residualvoltageratio,leakagecurrent,etc.,areanalyzedsuccessively.Then,themicroscopicstructureparametersandmacroscopicelectricalperformanceparametersareclassifiedaccordingtodifferenteffects.ThemicrostructureandelectricalpropertiesofZnOvaristorswereusedasoptimizationvariables.Theoptimizationobjectivesareclassifiedintotwocategoriesaccordingtowhetheranyoptimizationvariablehasthesameinfluenceonallkindsofoptimizationobjectives,theoptimizationvariablescanbedividedintothreecategoriesaccordingtowhethertheoptimizationvariablesofthesameclassificationhavethesameeffectontheelectricalperformanceparameters.Fromthesimulationanalysis,thepreviousbatching-ballmilling-spraygranulation-watercut-pressing-firing-sideinsulationtreatmentandmanyotherprocesses,plustheperformancetestandothersteps,alongpreparationcycle,highmaterialcostoftheexperimentalmethodhasbeentransformedintoahighefficiencyandlowcostcalculationresearch,whichgreatlyreducesthetimeandcost.Inaddition,thispapersummarizesandclassifiesvariousmicro-structureparametersandmacro-electricalperformanceparameters,andsimplifiestheresearchprocessfromacomplexmulti-objectiveandmulti-variableproblemtoanoptimizationproblemwithonlytwotypesofobjectivesandthreetypesofvariables,whichgreatlyreducesthedifficultyoftheproblem.Basedontheabove,asimpleoptimizationstrategyisproposed,whichhasguidingsignificancefortheproductionofhighperformanceZnOvaristor.
作者：孟鹏飞 郭敬科 张恒志 秦锋 谢施君 雷潇 吴红梅[5] 胡军[6]Author：MengPengfei GuoJingke ZhangHengzhi QinFeng XieShijun LeiXiao WuHongmei[5] HuJun[6]
作者单位：四川大学电气工程学院成都610065国网西藏电科院拉萨850000西北核技术研究所西安710024国网四川省电科院成都610041西藏农牧学院林芝860000清华大学电机系北京100084
刊名：电工技术学报
Journal：TransactionsofChinaElectrotechnicalSociety
年，卷(期)：2024, 39(5)
分类号：TM286
关键词：ZnO压敏电阻 材料计算 微观结构 电气性能 关联机制
Keywords：ZnOvaristor materialscomputation micro-structure electricalcharacteristics correlationmechanism
机标分类号：TM723TM862TB332
在线出版日期：2024年3月19日
基金项目：国家自然科学基金，西藏自治区科技创新基地项目，清华大学新型电力系统运行与控制全国重点实验室开放基金ZnO压敏电阻微观结构参数与宏观电气性能的关联机制[
期刊论文] 电工技术学报--2024, 39(5)孟鹏飞 郭敬科 张恒志 秦锋 谢施君 雷潇 吴红梅 胡军ZnO压敏电阻是金属氧化物避雷器的核心部件,在抑制电力系统过电压方面发挥了重要的作用.随着特高压输电技术的发展,对ZnO压敏电阻的残压、通流容量等电气特性提出了更高的要求.该文从材料计算的角度出发,以基于Voronoi模...参考文献和引证文献
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ZnO压敏电阻微观结构参数与宏观电气性能的关联机制 The Correlation Mechanism That Micro-Structure Parameters of ZnO Varistor to the Macroscopic Electrical Characteristics
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