文档名：高温溶液法生长4HSiC单晶的助溶剂研究进展
摘要：碳化硅(SiC)作为第三代半导体材料,不仅在化学性能上相对稳定,而且具有一系列突出的物理性能优势,如器件极限工作温度高、临界击穿电场强度大及热导率高等,是目前相对成熟且应用最广的宽禁带材料.为满足SiC在新能源汽车、太阳能光伏及风力发电等领域的大规模应用需求,高质量、大尺寸、低成本的SiC单晶生长工艺仍是未来研究重点.其中,高温溶液生长法(HTSG)获得的SiC单晶具有晶体位错少、易扩径且易实现P型掺杂、成本低等优势,弥补了物理气相传输法(PVT)生长出的晶体缺陷多且高能耗、高成本等不足.在HTSG法生长SiC单晶中,助溶剂的合理选择是提高SiC晶体生长效率与生长质量的关键因素;目前,常用的助溶液体系为Si-Cr二元或Si-Cr-Al三元体系.4H碳化硅(4H-SiC)作为一种典型的SiC晶体结构,存在一个六方格点和一个立方格点,且双原子层以ABCB-ABCB形式连接,这种排列方式使得4H-SiC晶体具有较高硬度及热稳定性.本文首先总结了HTSG法生长4H-SiC单晶中助溶剂的研究历程,然后从热力学角度分析了助溶液体系对晶体生长的影响,并归纳总结了针对助溶剂的研究所采用的不同方法,最后提出了HTSG法生长4H-SiC单晶中助溶剂研究的重点和难点.
Abstract：Siliconcarbide(SiC)asathird-generationsemiconductormaterialwithstablechemicalpropertiesiscurrentlythemostwidelyusedwide-bandmaterial.Moreover,SiChassignificantadvantagessuchasahighdevicelimittemperature,ahighcriticalbreakdownfieldstrength,andahighthermalconductivity.SiCsinglecrystalswithhigh-quality,large-size,low-costcanbeusedinlarge-scaleSiCapplications.Thehigh-temperaturesolutiongrowthmethod(HTSG)forgrowingSiCofferssomeadvantagessuchasreducedcrystaldislocations,easeofoperation,feasibilityofP-typedoping,andlowcost.Theseadvantagescancompensateforthedrawbacksofhighenergyconsumption,poorcrystalquality,andhighcostsassociatedwiththecrystalgrowthprocessofthephysicalvaportransport(PVT)method.Nevertheless,theselectionofsolventsintheHTSGmethodisakeyfactorinimprovingthecrystalgrowthefficiencyandgrowthquality.TheexistingmainstreamsystemsoftheHTSGmethodareSi-CrbinarysystemandSi-Cr-Alternarysystem.4H-SiChasahexagonallatticepointandacubiclatticepoint,andthediatomiclayersareconnectedintheformofABCB-ABCB.Therefore,aregularatomicarrangementisneededtoavoidtheentrapmentofothersolventatoms.Foradeeperunderstandingofadvancesinsolventsforthegrowthof4H-SiCsinglecrystalsbyHTSGtechnique,thisreviewfirstlysummarizedtheresearchhistoryofthesolvent,analyzedtheinfluenceofthesolventsystemonthecrystalgrowthfromdifferentperspectivesofthermodynamics,andgavedifferentmethodsusedforsolventresearch.Finally,thisreviewrepresentedthecrucialpointsanddifficultiesintheresearchofsolventsinthegrowthof4H-SiCsinglecrystalsbyhigh-temperaturesolutiongrowthmethod.SummaryandprospectsRecentresearchoncosolutionsforthegrowthofSiCsinglecrystalsbyHTSGmethodthroughvariousmethodsisrepresented.Theresearchscopeofsolventsinvolvesthermalphysicalperformanceparameters,Cdissolution,thermochemicalproperties,thermodynamicproperties,andotheraspects.However,theexistingresearchhasnotyetidentifiedtheoptimalsolubilizingsystemfromatheoreticalperspective,aswellasthesubstantialimpactofelementratiosinvarioussolutionsystemsoncrystalgrowth.Therearestillseveraldifficultiesintheresearchofsolutionsasfollows:1)ItisdifficulttotestthemixedsolutionduetothehighexperimentaltemperatureoftheHTSGmethod.Atpresent,itispossibletoroughlypredictthethermalandphysicalperformanceparametersofsolutionsthroughtheoreticalcalculations,butequipmentfortherelatedexperimentsisunavailableandthecostisalsohigh.Effectivelyimprovingtheaccuracyofsimulationandconducingaccuratepredictionsforexperimentscanbeachievedviain-depthresearchonthechangesinthermalandphysicalperformanceparametersofsolutions.2)TheconcentrationofCinthesolutionisakeyfactoraffectingthequalityofcrystalgrowth.TheconcentrationofCisinvestigatedboththeoreticallyandexperimentallyunderidealconditionsofthermalequilibrium.Theseedcrystalscanexperiencemelt-throughduringtheremeltingprocessofcrystalgrowth,iftheconcentrationofCinthesolutionistoolow.Onthecontrary,iftheconcentrationofCinthesolutionistoohigh,itislikelythatcrystallizationcanoccurbeforetheimpuritiesonthesurfaceoftheseedcrystalarecompletelymelted.Thesituationsabovecouldseriouslyaffectthequalityofthecrystalgrowth.Itplaysanimportantroleinimprovingcrystalqualityviain-situdetectingthechangesinCconcentrationinsidethecrucible.3)TheexistingHTSGmethodusuallyusesgraphitecruciblesasaCsourceforcrystalgrowth.Asthetemperatureinsidethecrucibleincreases,graphitecrucibleiscontinuouslycorrodedbythesolution,presentingdifferentshapes.Differentshapedcruciblescanseriouslyaffectthestabilityoftheflowfieldinsidethecrucible,andevenchangethetrajectoryoftheflowfield.In-depthresearchonthecorrosionprocessofgraphitecruciblesbyauxiliarysolutionscaneffectivelyavoidnegativeeffectscausedbychangesinflowfieldandtemperaturefieldinthelaterstageofgrowth.AlthoughtherearestillsomedifficultiestoovercomeinthestudyofsolventsforthegrowthofSiCsinglecrystalsbytheHTSGmethodwiththecontinuouseffortsofnumerousresearchteams,somekeyissuesareconstantlyproposedandsolved.TheresearchonsolventscanalsoacceleratethepaceofHTSGmethodforgrowingSiCsinglecrystals,openingadoortolow-costandlow-energySiCsinglecrystalgrowth.
作者：丁祥 钱昊 梁刚强 陈雅薇 刘源 Author：DINGXiang QIANHao LIANGGangqiang CHENYawei LIUYuan
作者单位：安徽工业大学,冶金减排与资源综合利用教育部重点实验室,安徽马鞍山243002;清华大学材料学院,北京100084清华大学材料学院,北京100084;先进成形制造教育部重点实验室,北京100084
刊名：硅酸盐学报 ISTICEIPKU
Journal：JournaloftheChineseCeramicSociety
年，卷(期)：2024, 52(7)
分类号：O781
关键词：碳化硅 高温溶液法 助溶剂 热力学计算
Keywords：siliconcarbide hightemperaturesolutiongrowthmethod solvent thermodynamiccalculations
机标分类号：O782TQ128.54TB342
在线出版日期：2024年7月24日
基金项目：北京市科技计划项目，安徽省高等学校自然科学研究项目高温溶液法生长4H-SiC单晶的助溶剂研究进展[
期刊论文] 硅酸盐学报--2024, 52(7)丁祥 钱昊 梁刚强 陈雅薇 刘源碳化硅(SiC)作为第三代半导体材料,不仅在化学性能上相对稳定,而且具有一系列突出的物理性能优势,如器件极限工作温度高、临界击穿电场强度大及热导率高等,是目前相对成熟且应用最广的宽禁带材料.为满足SiC在新能源汽车、...参考文献和引证文献
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高温溶液法生长4H-SiC单晶的助溶剂研究进展 Recent Progress on Solvents for Growth of 4H-SiC Single Crystals by High-Temperature Solution Growth Technique
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